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Quasi-planar Gallium Arsenide heterojunction bipolar transistor device entirely grown by Chemical Beam Epitaxy Alexandre F., Zerguine D., Launay P., Benchimol J.L., Berz M., Sermage B., Komatitsch D., Juhel M. J. Crystal Growth 136, 1-4 (1994) 235-240 [hal-00669047 - version 1]