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Quasi-planar Gallium Arsenide heterojunction bipolar transistor device entirely grown by Chemical Beam Epitaxy
Alexandre F., Zerguine D., Launay P., Benchimol J.L., Berz M., Sermage B., Komatitsch D., Juhel M.
J. Crystal Growth 136, 1-4 (1994) 235-240 [hal-00669047 - version 1]