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A Low-Voltage CMOS Buffer for RF Applications Based on a Fully-Differential Voltage-Combiner

Abstract : This paper presents a new CMOS buffer circuit topology for radio-frequency (RF) applications based on a fully-differential voltage-combiner circuit, capable of operating at low-voltage. The proposed circuit uses a combination of common-source (CS) and common-drain (CD) devices. The simulation results show good levels of linearity and bandwidth. To improve total harmonic distortion (THD) a source degeneration technique is used. The proposed circuit has been designed in a 130nm logic CMOS technology and it achieves a simulated gain of 1.54 dB, a bandwidth of 1.14 GHz for a total power dissipation of 13.34 mW, when driving an RF active probe (with 0.8 pF in parallel with 200 kΩ).
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S. Abdollahvand, R. Santos-Tavares, João Goes. A Low-Voltage CMOS Buffer for RF Applications Based on a Fully-Differential Voltage-Combiner. 4th Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS), Apr 2013, Costa de Caparica, Portugal. pp.611-618, ⟨10.1007/978-3-642-37291-9_66⟩. ⟨hal-01348808⟩

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