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Light Memory Operation Based on a Double Pin SiC Device

Abstract : Experimental optoelectronic characterization of a p-i’(a-SiC:H)-n/p-i(a-Si:H)-n heterostructure with low conductivity doped layers shows the feasibility of tailoring channel bandwidth and wavelength by optical bias through back and front side illumination. Front background enhances light-to-dark sensitivity of the long and medium wavelength range, and strongly quenches the others. Back violet background enhances the magnitude in short wavelength range and reduces the others. Experiments have three distinct programmed time slots: control, hibernation and data. Throughout the control time slot steady light wavelengths illuminate either or both sides of the device, followed by the hibernation without any background illumination. The third time slot allows a programmable sequence of different wavelengths with an impulse frequency of 6000Hz to shine upon the sensor. Results show that the control time slot illumination has an influence on the data time slot which is used as a volatile memory with the set, reset logical functions.
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V. Silva, M. Barata, M. Vieira, P. Louro, M. Vieira. Light Memory Operation Based on a Double Pin SiC Device. 6th Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS), Apr 2015, Costa de Caparica, Portugal. pp.265-272, ⟨10.1007/978-3-319-16766-4_29⟩. ⟨hal-01343493⟩

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