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Electrochemical Transistor Based on Tungsten Oxide with Optoelectronic Properties

Abstract : This paper reports the integration of an electrochromic inorganic oxide semiconductor (WO3) into an electrolyte gated transistor device. The resulting electrochromic transistor (EC-T) is a novel optoelectronic device, exhibiting simultaneous optical and electrical modulation. These devices show an On-Off ratio of $$ 5\times 10^{ 6} $$5×106 and a transconductance (gm) of 3.59 mS, for gate voltages (VG) between −2 and 2 V, which, to the authors knowledge, are one of the best values ever reported for this type of electrochemical transistors. The simple and low-cost processing together with the electrical/optical performances, well supported into a comprehensive analysis of device physics, opens doors for a wide range of new applications in display technologies, biosensors, fuel cells or electrochemical logic circuits.
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Paul Grey, Luís Pereira, Sónia Pereira, Pedro Barquinha, Inês Cunha, et al.. Electrochemical Transistor Based on Tungsten Oxide with Optoelectronic Properties. 7th Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS), Apr 2016, Costa de Caparica, Portugal. pp.542-550, ⟨10.1007/978-3-319-31165-4_51⟩. ⟨hal-01438282⟩

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