Design of a Modified Ultra-Wide Band Low-Noise Amplifier (UWB.LNA) Topology with Good Linearity in CMOS 65 nm Technology

Abstract : The Low-Noise Amplifier (LNA) is the first and the important building block in a radiofrequency (RF) receiver since it must lead the signal from a receiving antenna at a level that can be properly addressed by the down-conversion architecture without adding noise. This paper describes a modified LNA architecture for Ultra-Wide Band (UWB) applications using a cascade inductive source degeneration topology. The proposed architecture was designed using CMOS 65 nm technology to operate in a broad frequency band from 0.8 GHz to 2.4 GHz which includes a large number of standards and RF applications. The designed UWB LNA shows a 14.35 dB power gain with a noise figure of 1.4 dB for power consumption of 29 mW, a 1-dB compression point ranging from -5 to 3 dBm, a IP3 ranging from 5 to 14 dBm, and an input return loss below -10 dBm.
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Modelling, Measurement and Control, A General Physics and Electrical Applications, AMSE, 2010, 83 (3)
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Contributeur : Ahmed El Oualkadi <>
Soumis le : samedi 15 février 2014 - 19:53:35
Dernière modification le : lundi 24 septembre 2018 - 18:02:14
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  • HAL Id : hal-00947382, version 1

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Khalid Faitah, Ahmed El Oualkadi, Said Belkouch, Abdellah Ait Ouhaman. Design of a Modified Ultra-Wide Band Low-Noise Amplifier (UWB.LNA) Topology with Good Linearity in CMOS 65 nm Technology. Modelling, Measurement and Control, A General Physics and Electrical Applications, AMSE, 2010, 83 (3). 〈hal-00947382〉

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