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Design of a Modified Ultra-Wide Band Low-Noise Amplifier (UWB.LNA) Topology with Good Linearity in CMOS 65 nm Technology

Abstract : The Low-Noise Amplifier (LNA) is the first and the important building block in a radiofrequency (RF) receiver since it must lead the signal from a receiving antenna at a level that can be properly addressed by the down-conversion architecture without adding noise. This paper describes a modified LNA architecture for Ultra-Wide Band (UWB) applications using a cascade inductive source degeneration topology. The proposed architecture was designed using CMOS 65 nm technology to operate in a broad frequency band from 0.8 GHz to 2.4 GHz which includes a large number of standards and RF applications. The designed UWB LNA shows a 14.35 dB power gain with a noise figure of 1.4 dB for power consumption of 29 mW, a 1-dB compression point ranging from -5 to 3 dBm, a IP3 ranging from 5 to 14 dBm, and an input return loss below -10 dBm.
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https://hal.inria.fr/hal-00947382
Contributor : Ahmed El Oualkadi <>
Submitted on : Saturday, February 15, 2014 - 7:53:35 PM
Last modification on : Friday, August 9, 2019 - 3:18:07 PM
Long-term archiving on: : Thursday, May 15, 2014 - 11:41:01 AM

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  • HAL Id : hal-00947382, version 1

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Khalid Faitah, Ahmed El Oualkadi, Said Belkouch, Abdellah Ait Ouhaman. Design of a Modified Ultra-Wide Band Low-Noise Amplifier (UWB.LNA) Topology with Good Linearity in CMOS 65 nm Technology. Modelling, Measurement and Control, A General Physics and Electrical Applications, AMSE, 2010, 83 (3). ⟨hal-00947382⟩

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