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Design of High Isolation Frequency Mixer in CMOS 0.18 μm Technology Suitable for Low Power Radio Frequency Applications

Abstract : In this paper we will present the design of Single Balanced Mixer, operating at a frequency RF of 1.9 GHz, implemented in 0.18 μm CMOS technology at supply voltage of 1.8 V. We will calculate the values components of this circuit and in particular the size of CMOS used to achieve a better isolation while keeping a good gain of the proposed architecture with a low power consumption.The obtained results show a conversion gain equal to 7 dB and low power consumption equal to 3.86 mW at 1.8.V voltage supply. The single side band noise figure performance can be acceptable roughly equal to 8.dB. These results show a good potential of this CMOS mixer and justify its use for low-power wireless communications.
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https://hal.inria.fr/hal-00947412
Contributor : Ahmed El Oualkadi <>
Submitted on : Sunday, February 16, 2014 - 12:22:52 AM
Last modification on : Friday, August 9, 2019 - 3:18:07 PM
Long-term archiving on: : Friday, May 16, 2014 - 10:37:00 AM

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  • HAL Id : hal-00947412, version 1

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Khalid Faitah, Ahmed El Oualkadi, Abdellah Ait Ouahman. Design of High Isolation Frequency Mixer in CMOS 0.18 μm Technology Suitable for Low Power Radio Frequency Applications. Physical and Chemical News, Best Edition, 2009, 49, pp.1-7. ⟨hal-00947412⟩

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