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Fine-Grain Reconfigurable Logic Cells Based on Double-Gate MOSFETs

Ian O'Connor 1 Ilham Hassoune 1 David Navarro 1 
1 INL - CSH - INL - Conception de Systèmes Hétérogènes
INL - Institut des Nanotechnologies de Lyon
Abstract : This work presents a new style of gate-level reconfigurable cells based on the double-gate (DG) MOSFET device. The proposed dynamic- and static-logic cells demonstrate significant gate area reductions compared to conventional CMOS lookup table (LUT) techniques (between 80-95%) while configuration memory requirements are also reduced (up to 60%). Simulation results show that it can be used either in low power reconfigurable applications (up to 90% power reduction is possible) or for speeds comparable to those of CMOS-LUTs.
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Ian O'Connor, Ilham Hassoune, David Navarro. Fine-Grain Reconfigurable Logic Cells Based on Double-Gate MOSFETs. 19th IFIP WG 10.5/IEEE International Conference on Very Large Scale Integration (VLSI-SoC), Oct 2008, Rhodes Island, India. pp.97-113, ⟨10.1007/978-3-642-12267-5_6⟩. ⟨hal-01054269⟩



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