Dynamic Behavior of Resistive Random Access Memories (RRAMS) Based on Plastic Semiconductor

Abstract : Resistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording current-voltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structure, which inhibits the switching at high ramp rates (1000 V/s). This behavior is modeled and explained in terms of an equivalent circuit.
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Luis M. Camarinha-Matos; Ehsan Shahamatnia; Gonçalo Nunes. 3rd Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS), Feb 2012, Costa de Caparica, Portugal. Springer, IFIP Advances in Information and Communication Technology, AICT-372, pp.535-540, 2012, Technological Innovation for Value Creation. 〈10.1007/978-3-642-28255-3_59〉
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Paulo Rocha, Asal Kiazadeh, Qian Chen, Henrique Gomes. Dynamic Behavior of Resistive Random Access Memories (RRAMS) Based on Plastic Semiconductor. Luis M. Camarinha-Matos; Ehsan Shahamatnia; Gonçalo Nunes. 3rd Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS), Feb 2012, Costa de Caparica, Portugal. Springer, IFIP Advances in Information and Communication Technology, AICT-372, pp.535-540, 2012, Technological Innovation for Value Creation. 〈10.1007/978-3-642-28255-3_59〉. 〈hal-01365773〉

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