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Dynamic Behavior of Resistive Random Access Memories (RRAMS) Based on Plastic Semiconductor

Abstract : Resistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording current-voltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structure, which inhibits the switching at high ramp rates (1000 V/s). This behavior is modeled and explained in terms of an equivalent circuit.
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Paulo Rocha, Asal Kiazadeh, Qian Chen, Henrique Gomes. Dynamic Behavior of Resistive Random Access Memories (RRAMS) Based on Plastic Semiconductor. 3rd Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS), Feb 2012, Costa de Caparica, Portugal. pp.535-540, ⟨10.1007/978-3-642-28255-3_59⟩. ⟨hal-01365773⟩

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