Skip to Main content Skip to Navigation
Conference papers

Dynamic Behavior of Resistive Random Access Memories (RRAMS) Based on Plastic Semiconductor

Abstract : Resistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording current-voltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structure, which inhibits the switching at high ramp rates (1000 V/s). This behavior is modeled and explained in terms of an equivalent circuit.
Document type :
Conference papers
Complete list of metadata

Cited literature [13 references]  Display  Hide  Download
Contributor : Hal Ifip Connect in order to contact the contributor
Submitted on : Tuesday, September 13, 2016 - 3:57:42 PM
Last modification on : Friday, August 23, 2019 - 8:50:02 PM
Long-term archiving on: : Wednesday, December 14, 2016 - 2:31:17 PM


Files produced by the author(s)


Distributed under a Creative Commons Attribution 4.0 International License



Paulo F. Rocha, Asal Kiazadeh, Qian Chen, Henrique L. Gomes. Dynamic Behavior of Resistive Random Access Memories (RRAMS) Based on Plastic Semiconductor. 3rd Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS), Feb 2012, Costa de Caparica, Portugal. pp.535-540, ⟨10.1007/978-3-642-28255-3_59⟩. ⟨hal-01365773⟩



Record views


Files downloads