HAL will be down for maintenance from Friday, June 10 at 4pm through Monday, June 13 at 9am. More information
Skip to Main content Skip to Navigation
Conference papers

APP-LRU: A New Page Replacement Method for PCM/DRAM-Based Hybrid Memory Systems

Abstract : Phase change memory (PCM) has become one of the most promising storage media particularly for memory systems, due to its byte addressability, high access speed, and low energy consumption. In addition, hybrid memory systems involving both PCM and DRAM can utilize the merits of both media and overcome some typical drawbacks of PCM such as high write latency and limited lifecycle. In this paper, we present a novel page replacement algorithm called APP-LRU (Access-Pattern-prediction-based LRU) for PCM/DRAM-based hybrid memory systems. APP-LRU aims to reduce writes to PCM while maintaining stable time performance. Particularly, we detect read/write intensity for each page in the memory, and put read-intensive pages into PCM while placing write-intensive pages in DRAM. We conduct trace-driven experiments on six synthetic traces and one real OLTP trace. The results show that our proposal is able to reduce up to 5 times of migrations more than its competitors.
Document type :
Conference papers
Complete list of metadata

Cited literature [17 references]  Display  Hide  Download

Contributor : Hal Ifip Connect in order to contact the contributor
Submitted on : Friday, November 25, 2016 - 2:26:34 PM
Last modification on : Thursday, March 5, 2020 - 5:40:19 PM
Long-term archiving on: : Monday, March 20, 2017 - 6:04:28 PM


Files produced by the author(s)


Distributed under a Creative Commons Attribution 4.0 International License



Zhangling Wu, Peiquan Jin, Chengcheng Yang, Lihua Yue. APP-LRU: A New Page Replacement Method for PCM/DRAM-Based Hybrid Memory Systems. 11th IFIP International Conference on Network and Parallel Computing (NPC), Sep 2014, Ilan, Taiwan. pp.84-95, ⟨10.1007/978-3-662-44917-2_8⟩. ⟨hal-01403068⟩



Record views


Files downloads