Abstract : Thin-film transistors (TFTs) employing oxide semiconductors have recently emerged in electronics, offering excellent performance and stability, low processing temperature and large area processing, being indium-gallium-zinc oxide (IGZO) the most popular amorphous oxide semiconductor. In this work it is shown how IGZO TFTs can be integrated with multilayer high-κ dielectrics to obtain low operating voltages, both on glass and flexible PEN substrates. Then, the electrical properties extracted from these devices are used to design and simulate a 2nd-order Sigma-Delta ($$\Sigma\Delta$$ΣΔ) analog-to-digital converter (ADC), showing superior performance (e.g. SNDR ≈ 57 dB, and DR ≈ 65 dB) over ADCs using competing thin-film technologies.
https://hal.inria.fr/hal-01438281 Contributor : Hal IfipConnect in order to contact the contributor Submitted on : Tuesday, January 17, 2017 - 3:38:55 PM Last modification on : Wednesday, November 10, 2021 - 5:18:05 PM Long-term archiving on: : Tuesday, April 18, 2017 - 3:08:55 PM
Ana Correia, João Goes, Pedro Barquinha. Oxide TFTs on Flexible Substrates for Designing and Fabricating Analog-to-Digital Converters. 7th Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS), Apr 2016, Costa de Caparica, Portugal. pp.533-541, ⟨10.1007/978-3-319-31165-4_50⟩. ⟨hal-01438281⟩