Abstract : Thin-film transistors (TFTs) employing oxide semiconductors have recently emerged in electronics, offering excellent performance and stability, low processing temperature and large area processing, being indium-gallium-zinc oxide (IGZO) the most popular amorphous oxide semiconductor. In this work it is shown how IGZO TFTs can be integrated with multilayer high-κ dielectrics to obtain low operating voltages, both on glass and flexible PEN substrates. Then, the electrical properties extracted from these devices are used to design and simulate a 2nd-order Sigma-Delta ($$\Sigma\Delta$$ΣΔ) analog-to-digital converter (ADC), showing superior performance (e.g. SNDR ≈ 57 dB, and DR ≈ 65 dB) over ADCs using competing thin-film technologies.
Luis M. Camarinha-Matos; António J. Falcão; Nazanin Vafaei; Shirin Najdi. 7th Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS), Apr 2016, Costa de Caparica, Portugal. IFIP Advances in Information and Communication Technology, AICT-470, pp.533-541, 2016, Technological Innovation for Cyber-Physical Systems. 〈10.1007/978-3-319-31165-4_50〉
https://hal.inria.fr/hal-01438281
Contributeur : Hal Ifip
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Ana Correia, João Goes, Pedro Barquinha. Oxide TFTs on Flexible Substrates for Designing and Fabricating Analog-to-Digital Converters. Luis M. Camarinha-Matos; António J. Falcão; Nazanin Vafaei; Shirin Najdi. 7th Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS), Apr 2016, Costa de Caparica, Portugal. IFIP Advances in Information and Communication Technology, AICT-470, pp.533-541, 2016, Technological Innovation for Cyber-Physical Systems. 〈10.1007/978-3-319-31165-4_50〉. 〈hal-01438281〉
