Skip to Main content Skip to Navigation
Conference papers

TCAD Simulation of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors

Abstract : Indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) are simulated using TCAD software. Nonlinearities observed in fabricated devices are obtained through simulation and corresponding physical characteristics are further investigated. For small channel length (below 1 µm) TFTs’ simulations show short channel effects, namely drain-induced barrier lowering (DIBL), and effectively source-channel barrier is shown to decrease with drain bias. Simulations with increasing shallow donor-like states result in transfer characteristics presenting hump-like behavior as typically observed after gate bias stress. Additionally, dual-gate architecture is simulated, exhibiting threshold voltage modulation by the second gate biasing.
Document type :
Conference papers
Complete list of metadatas

Cited literature [16 references]  Display  Hide  Download

https://hal.inria.fr/hal-01438284
Contributor : Hal Ifip <>
Submitted on : Tuesday, January 17, 2017 - 3:38:59 PM
Last modification on : Thursday, June 4, 2020 - 6:26:03 PM
Document(s) archivé(s) le : Tuesday, April 18, 2017 - 3:05:38 PM

File

419233_1_En_52_Chapter.pdf
Files produced by the author(s)

Licence


Distributed under a Creative Commons Attribution 4.0 International License

Identifiers

Citation

Jorge Martins, Pedro Barquinha, João Goes. TCAD Simulation of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors. 7th Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS), Apr 2016, Costa de Caparica, Portugal. pp.551-557, ⟨10.1007/978-3-319-31165-4_52⟩. ⟨hal-01438284⟩

Share

Metrics

Record views

143

Files downloads

611