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TCAD Simulation of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors

Abstract : Indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) are simulated using TCAD software. Nonlinearities observed in fabricated devices are obtained through simulation and corresponding physical characteristics are further investigated. For small channel length (below 1 µm) TFTs’ simulations show short channel effects, namely drain-induced barrier lowering (DIBL), and effectively source-channel barrier is shown to decrease with drain bias. Simulations with increasing shallow donor-like states result in transfer characteristics presenting hump-like behavior as typically observed after gate bias stress. Additionally, dual-gate architecture is simulated, exhibiting threshold voltage modulation by the second gate biasing.
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Jorge Martins, Pedro Barquinha, João Goes. TCAD Simulation of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors. 7th Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS), Apr 2016, Costa de Caparica, Portugal. pp.551-557, ⟨10.1007/978-3-319-31165-4_52⟩. ⟨hal-01438284⟩



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