Abstract : Indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) are simulated using TCAD software. Nonlinearities observed in fabricated devices are obtained through simulation and corresponding physical characteristics are further investigated. For small channel length (below 1 µm) TFTs’ simulations show short channel effects, namely drain-induced barrier lowering (DIBL), and effectively source-channel barrier is shown to decrease with drain bias. Simulations with increasing shallow donor-like states result in transfer characteristics presenting hump-like behavior as typically observed after gate bias stress. Additionally, dual-gate architecture is simulated, exhibiting threshold voltage modulation by the second gate biasing.
Luis M. Camarinha-Matos; António J. Falcão; Nazanin Vafaei; Shirin Najdi. 7th Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS), Apr 2016, Costa de Caparica, Portugal. IFIP Advances in Information and Communication Technology, AICT-470, pp.551-557, 2016, Technological Innovation for Cyber-Physical Systems. 〈10.1007/978-3-319-31165-4_52〉
https://hal.inria.fr/hal-01438284
Contributeur : Hal Ifip
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Soumis le : mardi 17 janvier 2017 - 15:38:59
Dernière modification le : mardi 17 janvier 2017 - 15:49:43
Document(s) archivé(s) le : mardi 18 avril 2017 - 15:05:38
Jorge Martins, Pedro Barquinha, João Goes. TCAD Simulation of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors. Luis M. Camarinha-Matos; António J. Falcão; Nazanin Vafaei; Shirin Najdi. 7th Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS), Apr 2016, Costa de Caparica, Portugal. IFIP Advances in Information and Communication Technology, AICT-470, pp.551-557, 2016, Technological Innovation for Cyber-Physical Systems. 〈10.1007/978-3-319-31165-4_52〉. 〈hal-01438284〉
