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TCAD Simulation of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors
Abstract : Indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) are simulated using TCAD software. Nonlinearities observed in fabricated devices are obtained through simulation and corresponding physical characteristics are further investigated. For small channel length (below 1 µm) TFTs’ simulations show short channel effects, namely drain-induced barrier lowering (DIBL), and effectively source-channel barrier is shown to decrease with drain bias. Simulations with increasing shallow donor-like states result in transfer characteristics presenting hump-like behavior as typically observed after gate bias stress. Additionally, dual-gate architecture is simulated, exhibiting threshold voltage modulation by the second gate biasing.
Cited literature [16 references]
https://hal.inria.fr/hal-01438284
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Submitted on : Tuesday, January 17, 2017 - 3:38:59 PM
Last modification on : Wednesday, November 10, 2021 - 5:18:05 PM
Long-term archiving on: : Tuesday, April 18, 2017 - 3:05:38 PM
Contributor : Hal Ifip Connect in order to contact the contributor
Submitted on : Tuesday, January 17, 2017 - 3:38:59 PM
Last modification on : Wednesday, November 10, 2021 - 5:18:05 PM
Long-term archiving on: : Tuesday, April 18, 2017 - 3:05:38 PM
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419233_1_En_52_Chapter.pdf
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