D. S. Software, ATLAS User ' s Manual, pp.567-1000, 2013.

C. , V. Started, and G. , Sentaurus Device User Guide, Synopsis, 2009.

H. Hsieh, T. Kamiya, K. Nomura, H. Hosono, and C. Wu, Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states, Applied Physics Letters, vol.92, issue.13, p.133503, 2008.
DOI : 10.1063/1.2857463

K. Jeon, C. Kim, I. Song, J. Park, S. Kim et al., Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics, Applied Physics Letters, vol.93, issue.18, pp.4-7, 2008.
DOI : 10.1063/1.3013842

J. Shi, C. Dong, and Y. S. , Influence of Deep States in Active Layers on the Performance of Amorphous In-Ga-Zn-O Thin Film Transistors, Proc. China Display, pp.356-359, 2011.

H. Im, H. Song, J. Jeong, Y. Hong, and Y. Hong, Effects of defect creation on bidirectional behavior with hump characteristics of InGaZnO TFTs under bias and thermal stress, Japanese Journal of Applied Physics, vol.54, issue.3S, pp.153-156, 2015.
DOI : 10.7567/JJAP.54.03CB03

J. Lee, S. Choi, S. K. Kim, S. Choi, D. H. Kim et al., Modeling and Characterization of the Abnormal Hump in n-Channel Amorphous-InGaZnO Thin-Film Transistors After High Positive Bias Stress, IEEE Electron Device Letters, vol.36, issue.10, pp.1047-1049, 2015.
DOI : 10.1109/LED.2015.2466232

M. Mativenga, S. An, and J. Jang, Bulk Accumulation a-IGZO TFT for High Current and Turn-On Voltage Uniformity, IEEE Electron Device Letters, vol.34, issue.12, pp.1533-1535, 2013.
DOI : 10.1109/LED.2013.2284599

T. Lu, W. Chen, H. Zan, and M. Ker, Investigating electron depletion effect in amorphous indium???gallium???zinc-oxide thin-film transistor with a floating capping metal by technology computer-aided design simulation and leakage reduction, Japanese Journal of Applied Physics, vol.53, issue.6, p.64302, 2014.
DOI : 10.7567/JJAP.53.064302

K. Chen, G. Jiang, K. Chang, J. Chen, and C. Wu, Gas sensing properties of indium???gallium???zinc???oxide gas sensors in different light intensity, Analytical Chemistry Research, vol.4, pp.8-12, 2015.
DOI : 10.1016/j.ancr.2015.03.001

R. Fu, C. Liao, C. Leng, and S. Zhang, An IGZO TFT based in-cell capacitance touch sensor, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, pp.5-7, 2012.
DOI : 10.1109/ICSICT.2012.6467843

Y. Shen, C. Yang, S. Chen, S. Wu, T. Yang et al., IGZO thin film transistor biosensors functionalized with ZnO nanorods and antibodies, Biosensors and Bioelectronics, vol.54, pp.306-316, 2014.
DOI : 10.1016/j.bios.2013.10.043

A. P. Correia, P. Barquinha, J. C. Goes, and P. Da, A Second-Order ?? ADC Using Sputtered IGZO TFTs, 2015.
DOI : 10.1007/978-3-319-27192-7

R. Chen, W. Zhou, M. Zhang, M. Wong, and H. S. Kwok, Self-aligned top-gate InGaZnO thin film transistors using SiO2/Al2O3 stack gate dielectric, Thin Solid Films, vol.548, pp.572-575, 2013.
DOI : 10.1016/j.tsf.2013.09.020

J. Park, Characteristics of short-channel amorphous In-Ga-Zn-O thin film transistors and their circuit performance as a load inverter, Journal of Electroceramics, vol.29, issue.1, pp.74-79, 2012.
DOI : 10.1007/s10832-011-9680-5

F. Oba, S. R. Nishitani, S. Isotani, H. Adachi, and I. Tanaka, Energetics of native defects in ZnO, Journal of Applied Physics, vol.90, issue.2, p.3665, 2001.
DOI : 10.1063/1.1380994