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Optical pump-rejection filter based on silicon sub-wavelength engineered photonic structures

Abstract : The high index contrast of the silicon-on-insulator (SOI) platform allows the realization of ultra-compact photonic circuits. However, this high contrast hinders the implementation of narrow-band Bragg filters. These typically require corrugations widths of a few nanometers or double-etch ge-ometries, hampering device fabrication. Here we report, for the first time, on the realization of SOI Bragg filters based on sub-wavelength index engineering in a differential corrugation width configuration. The proposed double periodicity structure allows narrow-band rejection with a single etch step and relaxed width constraints. Based on this concept, we experimentally demonstrate a single-etch, 220 nm thick, Si Bragg filter featuring a corrugation width of 150 nm, a rejection bandwidth of 1.1 nm and an extinction ratio exceeding 40 dB. This represents a tenfold width increase compared to conventional single-periodicity, single-etch counterparts with similar bandwidths.
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Contributor : Laurent Labonté Connect in order to contact the contributor
Submitted on : Monday, May 29, 2017 - 5:15:50 PM
Last modification on : Thursday, August 4, 2022 - 4:59:32 PM
Long-term archiving on: : Wednesday, September 6, 2017 - 11:42:39 AM


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Diego Pérez-Galacho, Carlos Alonso-Ramos, Florent Mazeas, Xavier Le Roux, Dorian Oser, et al.. Optical pump-rejection filter based on silicon sub-wavelength engineered photonic structures. Optics Letters, 2017, 42 (8), pp.1468-1471. ⟨10.1364/OL.42.001468⟩. ⟨hal-01527014v2⟩



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