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Conference Papers Year : 2011

Resistive Random Access Memories (RRAMs) Based on Metal Nanoparticles

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Abstract

It is demonstrated that planar structures based on silver nanoparticles hosted in a polymer matrix show reliable and reproducible switching properties attractive for non-volatile memory applications. These systems can be programmed between a low conductance (off-state) and high conductance (on-state) with an on/off ratio of 3 orders of magnitude, large retention times and good cycle endurance. The planar structure design offers a series of advantages discussed in this contribution, which make it an ideal tool to elucidate the resistive switching phenomena.
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Dates and versions

hal-01566583 , version 1 (21-07-2017)

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Attribution - CC BY 4.0

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Asal Kiazadeh, Paulo R. Rocha, Qian Chen, Henrique L. Gomes. Resistive Random Access Memories (RRAMs) Based on Metal Nanoparticles. 2nd Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS), Feb 2011, Costa de Caparica, Portugal. pp.591-595, ⟨10.1007/978-3-642-19170-1_65⟩. ⟨hal-01566583⟩
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