Resistive Random Access Memories (RRAMs) Based on Metal Nanoparticles

Abstract : It is demonstrated that planar structures based on silver nanoparticles hosted in a polymer matrix show reliable and reproducible switching properties attractive for non-volatile memory applications. These systems can be programmed between a low conductance (off-state) and high conductance (on-state) with an on/off ratio of 3 orders of magnitude, large retention times and good cycle endurance. The planar structure design offers a series of advantages discussed in this contribution, which make it an ideal tool to elucidate the resistive switching phenomena.
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Luis M. Camarinha-Matos. 2nd Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS), Feb 2011, Costa de Caparica, Portugal. Springer, IFIP Advances in Information and Communication Technology, AICT-349, pp.591-595, 2011, Technological Innovation for Sustainability. 〈10.1007/978-3-642-19170-1_65〉
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Asal Kiazadeh, Paulo Rocha, Qian Chen, Henrique Gomes. Resistive Random Access Memories (RRAMs) Based on Metal Nanoparticles. Luis M. Camarinha-Matos. 2nd Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS), Feb 2011, Costa de Caparica, Portugal. Springer, IFIP Advances in Information and Communication Technology, AICT-349, pp.591-595, 2011, Technological Innovation for Sustainability. 〈10.1007/978-3-642-19170-1_65〉. 〈hal-01566583〉

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