Skip to Main content Skip to Navigation
Journal articles

Resonant tunneling transport in AlxGa1-x/InyGa1-yN/ AlxGa1-x/ InzGa1-zN quantum structures

Abstract : We present a room temperature simulation of the vertical electron transport in the pseudomorphic quantum stack Al0.5G0.5N/InxGa1−xN/Al0.5G0.5N/In0.1Ga0.9N/GaN, which is designed with a 6 nm thick lateral In0.1Ga0.9N/GaN n-type corrected spacer. Using the transfer matrix formalism, we investigate the effects of the conduction band discontinuities and internal field on the transmission coefficient and the current-voltage characteristics by varying the indium contents in the central quantum well. We demonstrate that an optimal design in terms of compositions, thicknesses, and doping of the studied resonant tunneling structure may allow a peak-to-valley ratio as high as 882 @1.1–1.3 V.
Complete list of metadatas

https://hal.archives-ouvertes.fr/hal-03150395
Contributor : Jean-Louis Lazzari <>
Submitted on : Tuesday, February 23, 2021 - 5:25:34 PM
Last modification on : Wednesday, February 24, 2021 - 3:19:03 AM

File

Bhouri2015 Resonant tunneling ...
Files produced by the author(s)

Identifiers

Collections

Citation

A Bhouri, A Rached, J.-L. Lazzari. Resonant tunneling transport in AlxGa1-x/InyGa1-yN/ AlxGa1-x/ InzGa1-zN quantum structures. Journal of Physics D: Applied Physics, IOP Publishing, 2015, 48 (38), pp.385102. ⟨10.1088/0022-3727/48/38/385102⟩. ⟨hal-03150395⟩

Share

Metrics

Record views

1