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Numerical simulation of 2D Silicon MESFET and MOSFET described by the MEP based energy-transport model with a mixed finite elements scheme

A.M. Anile Americo Marrocco 1 V. Romano J.M. Sellier
1 BANG - Nonlinear Analysis for Biology and Geophysical flows
LJLL - Laboratoire Jacques-Louis Lions, Inria Paris-Rocquencourt
Abstract : The Mixed Finite Element approximation scheme presented in is used to simulate a consistent hydrodynamical model for electron transport in semiconductors, free of any fitting parameters, formulated on the basis of the maximum entropy principle (MEP) in \cite{AnRo,Ro1,Ro2}.. 2D-MESFET and 2D-MOSFET Silicon devices are simulated in the parabolic band approximation. Comparison with the results obtained by the Stratton model are presented for completeness.
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https://hal.inria.fr/inria-00071488
Contributor : Rapport de Recherche Inria <>
Submitted on : Tuesday, May 23, 2006 - 5:43:49 PM
Last modification on : Wednesday, December 9, 2020 - 3:11:24 PM
Long-term archiving on: : Sunday, April 4, 2010 - 10:18:46 PM

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  • HAL Id : inria-00071488, version 1

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A.M. Anile, Americo Marrocco, V. Romano, J.M. Sellier. Numerical simulation of 2D Silicon MESFET and MOSFET described by the MEP based energy-transport model with a mixed finite elements scheme. [Research Report] RR-5095, INRIA. 2004. ⟨inria-00071488⟩

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