A Posteriori Error Estimators for Linearized Semiconductor Equations with Mixed Finite Elements Approach in $H(\div) \times L^2$

Abstract : In the framework of Mixed Finite Element Methods, the mathematical analysis of an error indicator, which relies on the residual of a linearized Drift-Diffusion model of the transport equation for electrons in heterojunction semiconductor devices using Fermi-Dirac statistic, is presented. Just now, no numerical experiences have been carried out in order to prove the efficiency of the proposed isotropic estimator. However, from its numerical interpretation, it appears that they are coherent and well indicate the boundary layer and abrupt hetrerojunction problems.
Type de document :
Rapport
[Research Report] RR-2666, INRIA. 1995
Liste complète des métadonnées

https://hal.inria.fr/inria-00074024
Contributeur : Rapport de Recherche Inria <>
Soumis le : mercredi 24 mai 2006 - 14:20:42
Dernière modification le : vendredi 16 septembre 2016 - 15:13:10
Document(s) archivé(s) le : jeudi 24 mars 2011 - 13:52:47

Fichiers

Identifiants

  • HAL Id : inria-00074024, version 1

Collections

Citation

Abderrazzak El Boukili, Manolo Castro-Diaz. A Posteriori Error Estimators for Linearized Semiconductor Equations with Mixed Finite Elements Approach in $H(\div) \times L^2$. [Research Report] RR-2666, INRIA. 1995. 〈inria-00074024〉

Partager

Métriques

Consultations de la notice

272

Téléchargements de fichiers

347