Skip to Main content Skip to Navigation
Journal articles

New Approach for Improvement of Secondary Ion Mass Spectrometry Profile Analysis

Abstract : In this paper, we describe the improvement of secondary ion mass spectrometry (SIMS) profile analysis by a new approach based on partial deconvolution combined with scale-frequency shrinkage. The SIMS profiles are obtained by analysis of the delta layers of boron doped silicon in a silicon matrix, analyzed using Cameca-Ims6f at oblique incidence. These profiles can be approximated closely by exponential-like tail distributions with decay length, which characterizes the collisional mixing effect. The partial deconvolution removes the residual ion mixing effect. The contributions of high-frequency noise are removed by shrinkage to a great extent of the profiles. It is shown that this approach leads to a marked improvement in depth resolution without producing artifacts and aberrations caused principally by noise. Furthermore, it is shown that the asymmetry of the delta layers, caused by the collisional mixing effect, is completely removed, the decay length is decreased by a factor of 4 compared with that before deconvolution.
Complete list of metadata

Cited literature [4 references]  Display  Hide  Download

https://hal.inria.fr/hal-00947404
Contributor : Ahmed El Oualkadi <>
Submitted on : Saturday, February 15, 2014 - 9:23:51 PM
Last modification on : Friday, June 4, 2021 - 4:52:03 PM
Long-term archiving on: : Thursday, May 15, 2014 - 11:45:31 AM

File

JJAP.pdf
Files produced by the author(s)

Identifiers

Citation

M'Hamed Boulakroune, Ahmed El Oualkadi, Djamel Benatia, Tahar Kezai. New Approach for Improvement of Secondary Ion Mass Spectrometry Profile Analysis. Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2007, 46 (11), pp.7441-7445. ⟨10.1143/JJAP.46.7441⟩. ⟨hal-00947404⟩

Share

Metrics

Record views

289

Files downloads

493