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Electroforming Process in Metal-Oxide-Polymer Resistive Switching Memories

Abstract : Electroforming of an Al/Al2O3/polymer/Al resistive switching diode is reported. Electroforming is a dielectric soft-breakdown mechanism leading to hysteretic current–voltage characteristics and non–volatile memory behavior. Electron trapping occurs at early stages of electroforming. Trapping is physically located at the oxide/polymer interface. The detrapping kinetics is faster under reverse bias and for thicker oxides layers. Thermally detrapping experiments give a trap depth of 0.65 eV and a density of 5x1017 /cm2. It is proposed that the trapped electrons induce a dipole layer across the oxide. The associated electric field triggers breakdown and ultimately dictate the overall memory characteristics.
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Qian Chen, Henrique Gomes, Asal Kiazadeh, Paulo Rocha, Dago Leeuw, et al.. Electroforming Process in Metal-Oxide-Polymer Resistive Switching Memories. 3rd Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS), Feb 2012, Costa de Caparica, Portugal. pp.527-534, ⟨10.1007/978-3-642-28255-3_58⟩. ⟨hal-01365772⟩

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