Skip to Main content Skip to Navigation
Conference papers

Electroforming Process in Metal-Oxide-Polymer Resistive Switching Memories

Abstract : Electroforming of an Al/Al2O3/polymer/Al resistive switching diode is reported. Electroforming is a dielectric soft-breakdown mechanism leading to hysteretic current–voltage characteristics and non–volatile memory behavior. Electron trapping occurs at early stages of electroforming. Trapping is physically located at the oxide/polymer interface. The detrapping kinetics is faster under reverse bias and for thicker oxides layers. Thermally detrapping experiments give a trap depth of 0.65 eV and a density of 5x1017 /cm2. It is proposed that the trapped electrons induce a dipole layer across the oxide. The associated electric field triggers breakdown and ultimately dictate the overall memory characteristics.
Document type :
Conference papers
Complete list of metadata

Cited literature [16 references]  Display  Hide  Download
Contributor : Hal Ifip Connect in order to contact the contributor
Submitted on : Tuesday, September 13, 2016 - 3:57:24 PM
Last modification on : Sunday, August 25, 2019 - 8:20:03 PM
Long-term archiving on: : Wednesday, December 14, 2016 - 3:08:21 PM


Files produced by the author(s)


Distributed under a Creative Commons Attribution 4.0 International License



Qian Chen, Henrique L. Gomes, Asal Kiazadeh, Paulo F. Rocha, Dago De Leeuw, et al.. Electroforming Process in Metal-Oxide-Polymer Resistive Switching Memories. 3rd Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS), Feb 2012, Costa de Caparica, Portugal. pp.527-534, ⟨10.1007/978-3-642-28255-3_58⟩. ⟨hal-01365772⟩



Record views


Files downloads