Simulation and Experimental Characterization of a Unified Memory Device with Two Floating-Gates

Abstract : The operation of a novel unified memory device using two floating-gates is described through experimental characterization of a fabricated proof-of-concept device and confirmed through simulation. The dynamic, nonvolatile, and concurrent modes of the device are described in detail. Simulations show that the device compares favorably to conventional memory devices. Applications enabled by this unified memory device are discussed, highlighting the dramatic impact this device could have on next generation memory architectures.
Document type :
Conference papers
Complete list of metadatas

Cited literature [10 references]  Display  Hide  Download

https://hal.inria.fr/hal-01456958
Contributor : Hal Ifip <>
Submitted on : Monday, February 6, 2017 - 10:33:17 AM
Last modification on : Wednesday, August 21, 2019 - 10:38:02 AM
Long-term archiving on : Sunday, May 7, 2017 - 12:52:32 PM

File

978-3-642-45073-0_12_Chapter.p...
Files produced by the author(s)

Licence


Distributed under a Creative Commons Attribution 4.0 International License

Identifiers

Citation

Neil Spigna, Daniel Schinke, Srikant Jayanti, Veena Misra, Paul Franzon. Simulation and Experimental Characterization of a Unified Memory Device with Two Floating-Gates. 20th International Conference on Very Large Scale Integration (VLSI-SoC), Aug 2012, Santa Cruz, CA, United States. pp.217-233, ⟨10.1007/978-3-642-45073-0_12⟩. ⟨hal-01456958⟩

Share

Metrics

Record views

130

Files downloads

260