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Robust Hybrid TFET-MOSFET Circuits in Presence of Process Variations and Soft Errors

Abstract : In this work, to improve the timing yield of Tunnel Field Effect Transistor (TFET) circuits in the presence of process variations as well as their soft-error resiliency, we propose replacing some of TFET-based gates by MOSFET-based ones. The effectiveness of the proposed TFET-MOSFET hybrid implementation of the circuits are investigated by first studying the impacts of the process variation on the performances (I-V characteristics) of both homojunction InAs TFETs and MOSFETs. Next, to analyze the soft error rate of the circuits, the particle hit-induced transient current profiles of these devices are extracted. Based on these studies, a hybrid TFET-MOSFET circuit design approach which improves the reliability and soft-error resiliency compared to those of pure TFET-based circuits is suggested. Finally, the efficacy of the design approach is investigated by applying it to some circuits of ISCAS’89 benchmark package.
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https://hal.inria.fr/hal-01675198
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Maedeh Hemmat, Mehdi Kamal, Ali Afzali-Kusha, Massoud Pedram. Robust Hybrid TFET-MOSFET Circuits in Presence of Process Variations and Soft Errors. 24th IFIP/IEEE International Conference on Very Large Scale Integration - System on a Chip (VLSISOC), Sep 2016, Tallinn, Estonia. pp.41-59, ⟨10.1007/978-3-319-67104-8_3⟩. ⟨hal-01675198⟩

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